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  september 2006 rev 6 1/12 12 STL80N4LL n-channel 40v - 0.0042 ? - 80a - powerflat? (6x5) stripfet? power mosfet for dc-dc conversion general features improved die-to-footprint ratio very low profile package (1mm max) very low thermal resistance conduction losses reduced switching losses reduced description this series of product utilizes the latest advanced design rules of st?s proprietary stripfet? technology. the resulting transistor is optimized for low on-resistance and minimal gate charge. the chip-scaled powerflat? package allows a significant board space saving, still boosting the performance. applications switching application internal schematic diagram type v dss r ds(on) i d STL80N4LL 40v <0.005 ? 20a (1) 1. when mounted on fr-4 board of 1 inch2 , 2oz cu, t<10 sec powerflat?( 6x5 ) www.st.com order codes part number marking package packaging STL80N4LL l80n4ll powerflat? (6x5) tape & reel
contents STL80N4LL 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STL80N4LL electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate- source voltage 16 v v gs (1) 1. guaranteed for test time < 15ms gate- source voltage 18 v i d (2) 2. the value is rated according rthj-c drain current (continuous) at t c = 25c 80 a i d (2) drain current (continuous) at t c = 100c 50 a i d (3) 3. when mounted on fr-4 board of 1 inch2 , 2oz cu, t < 10 sec drain current (continuous) at t c = 25c 20 a i dm (4) 4. pulse width limited by safe operating area drain current (pulsed) 80 a p tot (2) total dissipation at t c = 25c 80 w p tot (3) total dissipation at t c = 25c 4 w derating factor (3) 0.03 w/c t stg t j storage temperature operating junction temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit rthj-c thermal resistance junction-case max 1.56 c/w rthj-pcb (1) 1. when mounted on fr-4 board of 1 inch2 , 2oz cu, t<10 sec thermal operating junction-pcb max 31.2 c/w
electrical characteristics STL80N4LL 4/12 2 electrical characteristics (t case = 25c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating@125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 16v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on resistance v gs = 10v, i d = 10 a v gs = 4.5v, i d =10 a 0.0042 0.005 0.005 0.007 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 2530 574 29 pf pf pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 13 5 ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 32v, i d = 20 a, v gs = 4.5v (see figure 13) 21.5 6.9 8.2 28 nc nc nc
STL80N4LL electrical characteristics 5/12 table 5. switching times symbol parameter test conditions min typ max unit t d(on) t r t d(off) t r turn-on delay time rise time turn-off delay time fall time v dd = 20v, i d = 10a, r g = 4.7 ? v gs = 10v (see figure 12) 17 25 62 9 ns ns ns ns table 6. source drain diode symbol parameter test conditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 20 80 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 20 a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20a,v dd = 20v di/dt = 100a/s t j = 150c (see figure 17) 43 64 3 ns nc a
electrical characteristics STL80N4LL 6/12 2.1 electrical characterist ics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. normalized b vdss vs temperature figure 6. static drain-source on resistance
STL80N4LL electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit STL80N4LL 8/12 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STL80N4LL package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STL80N4LL 10/12 dim. mm. inch min. typ max. min. typ. max. a 0.80 0.83 0.93 0.031 0.032 0.036 a1 0.02 0.05 0.0007 0.0019 a3 0.20 0.007 b 0.35 0.40 0.47 0.013 0.015 0.018 d 5.00 0.196 d1 4.75 0.187 d2 4.15 4.20 4.25 0.163 0.165 0.167 e 6.00 0.236 e1 5.75 0.226 e2 3.43 3.48 3.53 0.135 0.137 0.139 e4 2.58 2.63 2.68 0.103 0.105 e 1.27 0.050 l 0.70 0.80 0.90 0.027 0.031 0.035 powerflat? (6x5) mechanical data
STL80N4LL revision history 11/12 5 revision history table 7. revision history date revision changes 13-may-2005 1 first release. 20-jun-2005 2 updated mechanical data 22-jun-2005 3 new r g value on ta bl e 6 04-jan-2006 4 new footprint 06-jun-2006 5 complete version 04-sep-2006 6 new template, no content change
STL80N4LL 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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